irf140 39.95 (1.573) max. 17.15 (0.675) 16.64 (0.655) 30.40 (1.197) 30.15 (1.187) 26.67 (1.050) max. 11.18 (0.440) 10.67 (0.420) 1 2 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 12.07 (0.475) 11.30 (0.445) 1.78 (0.070) 1.52 (0.060) 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. v gs gate ? source voltage i d continuous drain current (v gs = 0 , t case = 25c) (v gs = 0 , t case = 100c) i dm pulsed drain current 1 p d power dissipation @ t case = 25c linear derating factor e as single pulse avalanche energy 2 i ar avalanche current 2 e ar repetitive avalanche energy 2 dv/dt peak diode recovery 3 t j , t stg operating and storage temperature range t l lead temperature 1.6mm (0.63?) from case for 10 sec. 20v 28a 20a 112a 125w 1.0w/c 250mj 28a 12.5mj 5.5v/ns -55 to +150c 300c mechanical data dimensions in mm (inches) n?channel power mosfet absolute maximum ratings (t case = 25c unless otherwise stated) features hermetically sealed to?3 metal package simple drive requirements screening options available to?3 metal package pin 1 ? gate pin 2 ? source case ? drain notes 1) pulse test: pulse width 300 s, ? 2% 2) @ v dd = 25v , l 480 h , r g = 25 ? , peak i l = 28a , starting t j = 25c 3) @ i sd 28a , di/dt 170a/ s , v dd bv dss , t j 150c , suggested r g = 9.1 ? v dss 100v i d(cont) 28a r ds(on) 0.077 ? ? document number 5349 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
parameter test conditions min. typ. max. unit 100 0.13 0.077 0.089 24 9.1 25 250 100 ?100 1660 550 120 30 59 2.4 12 12 30.7 21 145 21 105 28 112 1.5 400 2.9 negligible 5.0 13 1.67 0.12 30 v gs = 0 i d = 1ma reference to 25c i d = 1ma v gs = 10v i d = 20a v gs = 10v i d = 28a v ds = v gs i d = 250 a v ds 15v i ds = 20a v gs = 0 v ds = 0.8bv dss t j = 125c v gs = 20v v gs = ?20v v gs = 0 v ds = 25v f = 1mhz v gs = 10v i d = 28a v ds = 0.5bv dss v dd = 50v i d = 28a r g = 9.1 ? i s = 28a t j = 25c v gs = 0 i f = 28a t j = 25c d i / d t 100a/ sv dd 50v electrical characteristics (t case = 25c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on?state resistance 1 gate threshold voltage forward transconductance 1 zero gate voltage drain current forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge gate ? source charge gate ? drain (?miller?) charge turn?on delay time rise time turn?off delay time fall time continuous source current pulse source current 2 diode forward voltage 1 reverse recovery time reverse recovery charge 1 forward turn?on time v v/c ? v s a na pf nc ns a v ns c nh c/w bv dss ? bv dss ? t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr t on l d l s r jc r cs r ja static electrical ratings notes 1) pulse test: pulse width 300ms, ? 2% 2) repetitive rating ? pulse width limited by maximum junction temperature. dynamic characteristics source ? drain diode characteristics internal drain inductance (measured from 6mm down drain lead to centre of die) internal source inductance (from 6mm down source lead to source bond pad) thermal resistance junction ? case thermal resistance case ? sink thermal resistance junction ? ambient package characteristics thermal characteristics irf140 document number 5349 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk ( ? )
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